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180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...
-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c
[Jun 25, 2025]
Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
35A 120V N-Channel Enhancement Mode Power Mosfet Dsd270n12n3 to-252b
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...
1700V IGBT Module Dgc75c170m2t
[Jun 25, 2025]
75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and ...
0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f
[Jun 25, 2025]
PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
Aluminium Alloy Die Casting Parts OEM Auto Part Metal Processing Machinery Parts
[Jul 15, 2025]
Product Description PRECISION CASTING Precision casting of engineered products is an important area of manufacturing that provides a flexible and economical method for producing ...
Company: Wuxi Hannah Technology Co., Ltd.
Customized Precision Casting Services Aluminum Zinc Alloy Cast Metal High Pressure Die Casting ...
[Jul 15, 2025]
Product Description PRECISION CASTING Precision casting of engineered products is an important area of manufacturing that provides a flexible and economical method for producing ...
Company: Wuxi Hannah Technology Co., Ltd.
